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STMicroelectronics STD3NM60-1 — Discrete Semiconductors

STMicroelectronics STD3NM60-1

MPNSTD3NM60-1
Obsolete
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STD3NM60-1 Technical Specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation42W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds324 pF @ 25 V