STD3NK80Z-1

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ series, STD3NK80Z-1, N-channel MOSFET, 800 Vdss, 2.5 A continuous drain, 4.5 Ohm Rds(on) at 10 V, TO-251-3 IPAK through-hole, -55 to 150 °C junction temperature.

STMicroelectronics STD3NK80Z-1
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Technical specifications

STD3NK80Z-1 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.5Ohm @ 1.25A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V

Technical details

STD3NK80Z-1
[ALLOC] verified
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