STD3NK60ZT4

STMicroelectronics

STMicroelectronics SuperMESH™ N-Channel MOSFET, STD3NK60ZT4, 600 V Vdss, 2.4 A Id @ 25°C, 3.6 Ω Rds(on) @ 1.2 A, 10 V, DPAK (TO-252), -55°C to 150°C.

STMicroelectronics STD3NK60ZT4
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[IN STOCK] In Stock: 1,200 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD3NK60ZT4 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.4A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs3.6Ohm @ 1.2A, 10V
Gate charge (Qg) (Max) @ vgs11.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds311 pF @ 25 V

Technical details

600 V, 2.4 A — what the SuperMESH™ ratings mean for your offline supply

The STD3NK60ZT4: Its 600 V drain-source breakdown voltage (Vdss) provides headroom for universal-input AC-DC stages. Gate charge (Qg) is 11.8 nC at 10 V. Input capacitance (Ciss) of 311 pF at 25 V drain-source helps keep switching losses low.

NRND status — plan your last-time-buy or select a replacement now

This means STMicroelectronics is not actively promoting this part for new projects. For existing BOM lines, you have two paths: secure last-time-buy (LTB) inventory through the independent channel while stock remains available, or qualify a pin-compatible replacement. The base product number is STD3NK60, and parts sharing this base (STD3NK60Z, STD3NK60T4) are in the same SuperMESH™ family — but confirm pin compatibility and parametric overlap from the datasheet before swapping.

DPAK footprint and thermal reality

The TO-252 (DPAK) surface-mount package with two leads and a tab is the standard medium-power SMD footprint. Power dissipation is 45 W (Tc).

STD3NK60ZT4
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