STD3NK100Z

STMicroelectronics

STMicroelectronics STD3NK100Z, SuperMESH™ N-Channel MOSFET, 1000 V Vdss, 2.5 A Id, 6 Ohm Rds(on) at 10 V, 18 nC Qg, DPAK (TO-252), -55 to 150 °C.

STMicroelectronics STD3NK100Z
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD3NK100Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs6Ohm @ 1.25A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds601 pF @ 25 V

Technical details

High-voltage N-channel in a DPAK — what the ratings tell you

The STMicroelectronics STD3NK100Z is a 1000 V N-channel MOSFET from the SuperMESH™ series, built for offline flyback converters, LED lighting drivers, and auxiliary power supplies where the primary-side switch sees the full rectified mains. The 1000 V drain-source rating gives you a solid margin on a 240 VAC input with reflected voltage spikes — you won't be chasing avalanche failures on the first surge test. Continuous drain current is 2.5 A at 25°C case temperature, but the TO-252 package (DPAK) is the limiting factor: at elevated ambient you'll derate toward 1.5 A or so, depending on the copper area on the drain tab.

Temperature range and package — where this part lives

The DPAK (TO-252) footprint is a surface-mount package with a large drain tab — the board layout needs a decent copper pour and thermal vias to pull the heat out.

STD3NK100Z
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