STMicroelectronics · STripFET™ II Series
STMicroelectronics STripFET™ II STD35NF06T4, N-Channel MOSFET, 60 V Vdss, 35 A Id, 20 mOhm Rds(on) at 10 V, DPAK (TO-252), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 17.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 25 V |
The 20 mOhm Rds(on) at 10 V gate drive sets the conduction-loss floor for the design — at 17.5 A the IR drop is 350 mV, which keeps the dissipation under 6.1 W before the junction temperature rise is factored in.
Input capacitance is 1300 pF at 25 V drain-source — this is moderate for a 35 A device and keeps the switching losses manageable in hard-switched topologies like buck converters and motor bridges.
