STD35NF06LT4

STMicroelectronics

STMicroelectronics STD35NF06LT4, STripFET™ II, N-Channel MOSFET, 60 V Vdss, 35 A continuous drain, 17 mOhm Rds(on) max at 10 V, DPAK (TO-252) surface mount, -55°C to 175°C junction temperature.

STMicroelectronics STD35NF06LT4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD35NF06LT4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation80W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 17.5A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 25 V

Technical details

At 35 A continuous drain current, the device dissipates about 21 W in conduction alone at that on-resistance, so the 80 W power dissipation rating at the case provides headroom for switching losses and ambient derating. Gate charge of 33 nC at 4.5 V tells you the gate-drive energy per switching cycle. A 4.5 V logic-level drive is sufficient to achieve the rated Rds(on), which simplifies the gate-drive circuit in low-voltage systems.

The 80 W power dissipation rating assumes the tab is properly heatsunk through the board — without a good thermal via stitch to an inner-layer plane, the junction temperature will exceed the 175°C limit well below 35 A continuous.

STD35NF06LT4
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