Skip to main content
Log in
STMicroelectronics STD2NK90ZT4 — Discrete Semiconductors

STD2NK90ZT4 MOSFET N-CH 900V 2.1A DPAK, Active

MPNSTD2NK90ZT4
Active

STMicroelectronics SuperMESH™ STD2NK90ZT4, N-Channel MOSFET, 900 Vdss, 2.1 A Id, 6.5 Ohm Rds(on) @ 10V, DPAK (TO-252), -55 to 150 °C.

$1.8000Ref. price · indicative, final on quote
STMicroelectronics STD2NK90ZT4 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD2NK90ZT4 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.1A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs6.5Ohm @ 1.05A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V

Product details

900 V N-channel — the high-voltage workhorse in a DPAK

6.5 Ohm Rds(on) — conduction loss budget

Maximum on-resistance is 6.5 Ohm at Vgs=10 V and Id=1.05 A.

Gate charge and input capacitance — driver sizing

These numbers are moderate for a 900 V device — a typical gate driver with 1 A peak output can switch this MOSFET in the tens of nanoseconds, keeping crossover losses manageable in a 100 kHz flyback or PFC stage.

Temperature range and thermal limits

The 150°C ceiling means the part can handle brief overloads, but continuous operation near the limit requires careful heatsinking.

It is RoHS3 compliant.

Frequently asked questions

Can STD2NK90ZT4 be used for high-voltage switching applications?

Yes, its 900 V drain-source rating and 2.1 A current capability make it suitable for high-voltage switching in flyback converters, PFC stages, and auxiliary power supplies. The moderate gate charge and capacitance keep switching losses low at frequencies up to ~100 kHz with an appropriate gate driver.

What is the difference between STD2NK90ZT4 and STP2NK90Z?

The primary difference is package: STD2NK90ZT4 is surface-mount DPAK (TO-252), while STP2NK90Z is through-hole TO-220. Electrical ratings are similar — both are 900 V, 2.1 A N-channel SuperMESH™ MOSFETs. The DPAK version suits automated assembly and space-constrained boards; the TO-220 offers better thermal dissipation through a heatsink.