900 V N-channel — the high-voltage workhorse in a DPAK
6.5 Ohm Rds(on) — conduction loss budget
Maximum on-resistance is 6.5 Ohm at Vgs=10 V and Id=1.05 A.
Gate charge and input capacitance — driver sizing
These numbers are moderate for a 900 V device — a typical gate driver with 1 A peak output can switch this MOSFET in the tens of nanoseconds, keeping crossover losses manageable in a 100 kHz flyback or PFC stage.
Temperature range and thermal limits
The 150°C ceiling means the part can handle brief overloads, but continuous operation near the limit requires careful heatsinking.
It is RoHS3 compliant.