STD2NK90Z-1

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ series, STD2NK90Z-1, N-Channel MOSFET, 900 V Vdss, 2.1 A continuous drain, 6.5 Ohm Rds(on) at 10 V, 27 nC gate charge, Through Hole I-PAK package, -55 to 150 °C.

STMicroelectronics STD2NK90Z-1
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Technical specifications

STD2NK90Z-1 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.1A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs6.5Ohm @ 1.05A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V

Technical details

900 V N-channel in an I-PAK — flyback and auxiliary supply workhorse

The STD2NK90Z-1: It comes in a through-hole I-PAK package with short leads, intended for high-voltage DC-DC converters, flyback topologies, and auxiliary power supplies where board space is tight but a through-hole joint is preferred over a surface-mount tab.

On-resistance and gate charge — sizing the driver and the heatsink

The 6.5 Ohm Rds(on) at 1.05 A and 10 V sets the conduction loss floor. Total gate charge is 27 nC at 10 V, and input capacitance (Ciss) is 485 pF at 25 V drain-source. That 27 nC gate charge is moderate for a 900 V device — a small-signal gate driver or a PWM controller's totem-pole output can switch it at moderate frequencies without excessive cross-conduction loss. The 10 V drive voltage is required to achieve the rated Rds(on); driving with 5 V logic will leave the device partially enhanced and running hot.

Active production, through-hole package — BOM-fit for new builds

The I-PAK through-hole package is a standard leaded format, compatible with wave-solder and hand-assembly processes.

STD2NK90Z-1
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