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STMicroelectronics STD2NK100Z — Discrete Semiconductors

STD2NK100Z MOSFET, N-Channel 1000V 1.85A DPAK

MPNSTD2NK100Z
Active

STMicroelectronics SuperMESH™ series, STD2NK100Z, N-Channel MOSFET, 1000 V Vdss, 1.85 A Id, 8.5 Ohm Rds(on) at 10 V, DPAK surface-mount package.

$2.4700Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD2NK100Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.85A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs8.5Ohm @ 900mA, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds499 pF @ 25 V

Product details

The 8.5 Ohm maximum on-resistance at 900 mA and 10 V gate drive defines the conduction loss floor for a typical offline flyback primary switch or auxiliary supply rail.

Gate charge and switching — sizing the drive

Total gate charge is 16 nC at 10 V, which keeps the drive current requirement modest — a PWM controller with a 100 mA source/sink capability can switch this FET at 100 kHz without an external driver. Input capacitance is 499 pF at 25 V drain-source, a figure that influences the turn-on delay and the controller's drive impedance selection.

DPAK footprint and thermal path

The base product number is STD2NK100; the 'Z' suffix denotes the lead-free, ROHS-compliant version.

Frequently asked questions

What is the difference between STD2NK100Z and STD2NK100?

The STD2NK100 is the original non-RoHS version. The STD2NK100Z suffix indicates lead-free, ROHS3-compliant construction. Electrical ratings are identical.