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STMicroelectronics STD2N80K5 — Discrete Semiconductors

STD2N80K5 N-Channel MOSFET, 800V 2A DPAK, SuperMESH5

MPNSTD2N80K5
Active

STMicroelectronics STD2N80K5, SuperMESH5™ N-Channel MOSFET, 800 V, 2 A, 4.5 Ohm Rds(on), DPAK (TO-252), Tape & Reel.

$1.6000Ref. price · indicative, final on quote
STMicroelectronics STD2N80K5 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD2N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs4.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds95 pF @ 100 V

Product details

Gate charge and switching-loss budget

The STD2N80K5: Maximum gate charge (Qg) is 3 nC at Vgs = 10 V — one of the lowest figures for an 800 V MOSFET in this current class. Combined with a typical input capacitance (Ciss) of 95 pF at Vds = 100 V, the switching losses stay low even at frequencies above 100 kHz, which is where this part earns its keep in compact flyback designs. The 4.5 Ohm on-resistance is specified at Id = 1 A and Vgs = 10 V — at 2 A the Rds(on) will be higher due to the current-dependence of the channel, so budget conduction loss using the normalized curve from the datasheet.

Thermal and temperature-grade envelope

Operating junction temperature range spans -55°C to 150°C — the full industrial temperature grade. Maximum power dissipation is 45 W at Tc = 25°C, but the DPAK's thermal resistance to ambient (RthJA) is typically 80-100°C/W on a standard FR4 footprint, so the practical dissipation in still air is well below 2 W without a heatsink. The 150°C Tj(max) matches the upper limit for most automotive and industrial-grade components.

Sourcing posture and compliance

ROHS3 compliant per the latest EU directive.

Frequently asked questions

What is the closest functional alternative to STD2N80K5 — STU3LN80K5?

The STU3LN80K5 is an 800 V, 2 A N-channel MOSFET from the MDmesh™ K5 series, but it comes in a through-hole IPAK package, not the surface-mount DPAK of the STD2N80K5. The Rds(on) is lower at 3.25 Ohm vs 4.5 Ohm, and gate charge is 2.63 nC vs 3 nC. They are not pin-compatible — the STD2N80K5 will not drop into a board laid out for the through-hole STU3LN80K5 without a PCB change.