STD2HNK60Z-1

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ STD2HNK60Z-1, N-Channel MOSFET, 600V Vdss, 2A Id, 4.8 Ohm Rds(on), TO-251 IPAK, -55°C to 150°C.

STMicroelectronics STD2HNK60Z-1
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Technical specifications

STD2HNK60Z-1 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.8Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds280 pF @ 25 V

Technical details

The TO-251 (IPAK) through-hole package with short leads is a space-saver on single-layer boards — the tab is the drain, so the copper pad area under it sets the thermal resistance to ambient.

Parametric depth — gate charge and switching edge

Gate charge totals 15 nC at 10 V, which keeps the drive current low — a 100 kHz hard-switched flyback needs only about 1.5 mA average from the controller's driver. Input capacitance is 280 pF at 25 V drain-source, so the switching node rise time is dominated by the gate drive impedance rather than the miller plateau.

STD2HNK60Z-1
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