100V, 25A N-channel in DPAK — the switching workhorse
The STD26NF10 is an N-channel MOSFET from STMicroelectronics' STripFET™ II series, rated for 100 V drain-to-source breakdown and 25 A continuous drain current at 25°C case temperature. This puts it in the sweet spot for 48–72 V bus converters, battery management in power tools or e-bikes, and secondary-side synchronous rectification in AC-DC supplies up to about 200 W. The 38 mOhm maximum on-resistance at 12.5 A and 10 V gate drive means conduction losses stay under 6 W at full rated current — manageable with the DPAK's exposed pad soldered to a reasonable copper area on the PCB.
Gate drive and switching profile
Total gate charge is 55 nC at 10 Vgs — a figure that tells the gate driver designer the energy per switching cycle. At 100 kHz switching frequency the average gate drive current is 5.5 mA, well within the capability of a standard half-bridge driver like the L6384 or IR2104. The 1550 pF input capacitance at 25 Vds confirms the driver sees a moderate capacitive load. Gate threshold voltage is 4 V maximum at 250 µA drain current, so the device is fully enhanced with a 10 V gate drive. The ±20 V maximum gate-source rating provides margin against ringing on the gate node in hard-switching topologies.
Thermal and environmental envelope
Operating junction temperature range spans -55°C to 175°C, covering industrial and automotive under-hood environments without derating at the hot end. Maximum power dissipation is 100 W at case temperature — the practical limit is set by the PCB's ability to sink heat from the DPAK tab.
Package and mounting
Supplied in the DPAK (TO-252) surface-mount package — the same footprint as the industry-standard DPAK with a solderable tab on the bottom. The supplier device package is DPAK, and the package/case is TO-252-3, DPak (2 Leads + Tab), SC-63. The tab is the drain connection; the PCB layout must connect it to the drain node and provide a thermal via array under the tab for heat spreading. Available in Tape & Reel or Cut Tape options for both volume reflow and prototype builds.