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STMicroelectronics STD25NF10LA — Discrete Semiconductors

STD25NF10LA N-Channel MOSFET, 100V 25A DPAK

MPNSTD25NF10LA
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STMicroelectronics STripFET™ II N-Channel MOSFET, STD25NF10LA, 100V Vdss, 25A Id, 35mOhm Rds(on) at 10V, DPAK surface-mount, -55°C to 175°C.

$2.1600Ref. price · indicative, final on quote
STMicroelectronics STD25NF10LA datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD25NF10LA specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1710 pF @ 25 V

Product details

On-resistance and gate drive — what the 35 mOhm and 4.5 V / 10 V drive mean

The STD25NF10LA: At 10 V gate drive with 12.5 A drain current the Rds(on) is 35 mOhm maximum. The drive voltage is specified at both 4.5 V and 10 V.

The 175°C maximum junction allows headroom in a high-ambient enclosure or when the part is dissipating close to its 100 W case-temperature power limit.

DPAK package — footprint and thermal path

The part comes in the TO-252-3 / DPAK surface-mount package with two leads and a tab. The DPAK footprint is standard, so the STD25NF10LA can drop into a board already laid out for a DPAK N-channel MOSFET without a layout change.

Frequently asked questions

What is the Rds(on) of STD25NF10LA at 10V gate drive?

The Rds(on) is 35 mOhm maximum at 10 V gate drive with 12.5 A drain current. That is the guaranteed upper limit for conduction-loss calculations in a hard-switching design.