100 V, 25 A, 35 mOhm — the switching workhorse in a DPAK
The STD25N10F7 is an N-channel MOSFET from STMicroelectronics' DeepGATE™ and STripFET™ VII series, rated for 100 V drain-source and 25 A continuous drain current at 25°C case temperature. With a maximum on-resistance of 35 mOhm at 12.5 A and 10 V gate drive, it handles moderate-power switching in DC-DC converters, motor drives, and battery-management circuits without needing a heatsink in many layouts. The DPAK (TO-252) package is a surface-mount format that reworks well with a hot-air station or a soldering iron — the exposed tab carries the drain current and needs a decent copper pour on the PCB to pull heat away. At 40 W maximum dissipation, the thermal path through the tab matters more than the package itself.
Gate charge and capacitance — what they mean for the driver
Total gate charge is 14 nC at 10 V gate drive — a modest figure that keeps the gate-driver power loss low even at switching frequencies above 100 kHz. The input capacitance is 920 pF at 50 V drain bias, which means the driver sees a light capacitive load and the switching edges stay sharp without excessive ringing. The 4.5 V maximum gate threshold at 250 µA drain current means a 5 V logic-level gate drive will turn the device on fully, but the on-resistance is specified at 10 V drive — so for lowest conduction loss, budget a 10 V gate rail. The ±20 V Vgs max gives headroom for gate overshoot in hard-switching topologies.