STMicroelectronics STripFET™ STD20NF20, N-Channel MOSFET, 200 V Vdss, 18 A Id, 125 mOhm Rds(on) at 10 V, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 940 pF @ 25 V |
The STD20NF20: This N-channel MOSFET is rated for 200 V drain-source and 18 A continuous drain.
The 10 V drive voltage is specified for the rated Rds(on); the gate threshold voltage maximum is 4 V at 250 µA. With a gate charge of 39 nC at 10 V and input capacitance of 940 pF at 25 V drain-source, the switching losses are manageable with a standard gate driver IC.
The maximum gate threshold voltage is 4 V at 250 µA, so a 5 V gate drive will turn the device on, but the on-resistance will be higher than the 125 mOhm specified at 10 V. The drive voltage for maximum Rds(on) is 10 V. For 5 V drive, expect reduced conduction capability and higher losses.