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STMicroelectronics STD20NF10T4 — Discrete Semiconductors

STD20NF10T4 N-Channel MOSFET, 100V 25A DPAK

MPNSTD20NF10T4
Active

STMicroelectronics STD20NF10T4, STripFET™ II N-Channel MOSFET, 100 V drain-source, 25 A continuous drain, 45 mOhm Rds(on) max at 15 A/10 V, DPAK (TO-252) surface mount, -55 to 175°C junction.

$1.3200Ref. price · indicative, final on quote
STMicroelectronics STD20NF10T4 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD20NF10T4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

100 V, 25 A N-channel — where this MOSFET fits

Switching and drive — gate charge and threshold

Gate charge totals 55 nC at 10 V, a moderate figure that a typical gate-driver IC or MCU PWM output can handle with a series resistor to control ringing.

Thermal and environment — junction rating tells the story

Power dissipation is rated at 85 W at the case — the board's copper area under the DPAK tab determines the real thermal budget. Input capacitance is 1200 pF at 25 V drain-source, a value that influences switching losses at higher frequencies.

Frequently asked questions

What is the Rds(on) of STD20NF10T4 at 10 V?

The maximum on-resistance is 45 mOhm at 15 A drain current with 10 V gate drive.

Is STD20NF10T4 RoHS compliant?

Yes, the STD20NF10T4 is ROHS3 compliant.