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STMicroelectronics STD20NF06LT4 — Discrete Semiconductors

STD20NF06LT4 N-Channel MOSFET, 60 V, 24 A, STripFET™ II

MPNSTD20NF06LT4
Active

STMicroelectronics STripFET™ II series, N-Channel MOSFET, STD20NF06LT4, 60 V Vdss, 24 A continuous drain (Tc), 40 mOhm Rds(on) at 12 A, 10 V gate drive, DPAK (TO-252) package, -55°C to 175°C junction temperature.

$1.5600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD20NF06LT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±18V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds660 pF @ 25 V

Product details

60 V, 24 A N-channel in DPAK — STripFET™ II generation

The STD20NF06LT4 is a 60 V, 24 A N-channel power MOSFET from STMicroelectronics built on the STripFET™ II technology. It targets low-voltage DC-DC converters, load switches, and motor-drive half-bridges where conduction loss and switching speed both matter. The DPAK (TO-252) footprint keeps the board area tight while the 175°C junction rating lets it run hot in a cramped enclosure.

40 mOhm Rds(on) at 12 A — where the conduction loss lands

The on-resistance is specified at 40 mOhm maximum with 10 V on the gate and 12 A through the drain. That is the number to use when sizing the copper pour on the DPAK tab for a 24 A continuous load — at full current the dissipation hits about 23 W, and the 60 W package limit (Tc) leaves headroom if the heatsinking is adequate. The drive voltage range (5 V minimum for rated Rds(on)) means a 5 V logic gate drive will work, but the 10 V condition delivers the lowest resistance.

13 nC gate charge — fast switching without a heavy gate driver

With a total gate charge of 13 nC at 10 V, the STD20NF06LT4 switches cleanly from a modest gate-drive IC or even a push-pull from a PWM controller. The input capacitance sits at 660 pF at 25 V Vds, so the driver sees a light capacitive load. That combination keeps switching losses low in a 100–200 kHz converter and reduces the risk of gate-ringing on a long PCB trace.

STMicroelectronics lists the STD20NF06LT4 as Active.

Frequently asked questions

What is the Rds(on) of STD20NF06LT4?

The maximum Rds(on) is 40 mOhm at 12 A drain current with 10 V gate-to-source drive.