STMicroelectronics
STMicroelectronics STD1NK80ZT4, SuperMESH™ N-Channel MOSFET, 800 V Vdss, 1 A Id, 16 Ohm Rds(on), DPAK, -55 to 150°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 16Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 7.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 160 pF @ 25 V |
Maximum power dissipation is 45 W at case temperature. The 1 A continuous rating is thermally limited.
Supplied in TO-252-3 (DPAK) on tape & reel. Reflow profile follows standard lead-free solder.
No official second-source cross-reference is listed, but the part is a standard SuperMESH™ device with broad distribution coverage.
