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STMicroelectronics STD1NK60T4 — Discrete Semiconductors

STD1NK60T4 STMicro N-Channel MOSFET, 600V 1A DPAK

MPNSTD1NK60T4
Active

STMicroelectronics SuperMESH™ N-Channel MOSFET, STD1NK60T4, 600 V drain-source, 1 A continuous drain, 8.5 Ω Rds(on) @ 10 V, DPAK, -55 to 150 °C junction.

$1.0400Ref. price · indicative, final on quote
STMicroelectronics STD1NK60T4 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD1NK60T4 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.7V @ 250µA
Rds on (Max) @ id, vgs8.5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds156 pF @ 25 V

Product details

600 V, 1 A — where this MOSFET fits

The STD1NK60T4 is an N-channel enhancement-mode MOSFET from ST's SuperMESH™ series, rated for 600 V drain-source and 1 A continuous drain current at 25 °C case temperature. It comes in the DPAK (TO-252) surface-mount package and operates over the full military junction temperature range of -55 to 150 °C. This part is built for low-power offline switch-mode supplies, auxiliary flyback converters, PFC stages in lighting ballasts, and any 600 V bus where the load stays under 1 A. The SuperMESH™ technology delivers a low gate charge of 10 nC at 10 V and input capacitance of 156 pF at 25 V, which means a modest gate-drive signal from a PWM controller IC is enough to switch it cleanly — no external driver buffer needed in many designs.

8.5 Ω Rds(on) — what it costs you in conduction loss

The maximum on-resistance is 8.5 Ω at 500 mA drain current with 10 V gate drive. At 1 A the Rds(on) will be higher — the spec is taken at half the rated current.

There is no official second-source or pin-compatible alternate listed in the ST portfolio; the STD1NK60T4 is a standalone variant in the SuperMESH™ 600 V 1 A class.

Frequently asked questions

What is the advantage of SuperMESH?

SuperMESH™ is ST's high-voltage MOSFET technology that reduces gate charge and input capacitance compared to standard planar MOSFETs. For the STD1NK60T4 this means 10 nC gate charge and 156 pF input capacitance, enabling efficient switching with low gate-drive power.

Can I use STD1NK60T4 as a replacement for IRF820?

The IRF820 is a 500 V, 1.5 A MOSFET in TO-220. The STD1NK60T4 has a higher 600 V rating but lower 1 A continuous current and a different DPAK surface-mount package. Electrical parameters differ significantly — verify the circuit's current, gate-drive voltage, and thermal requirements before substituting.