600 V N-Channel MOSFET — where it fits
The STD1HNC60T4: The 15.5 nC typical gate charge keeps drive losses manageable in simple PWM controllers.
Obsolete — sourcing reality for STD1HNC60T4
The STD1HNC60T4 carries an obsolete lifecycle status.
STD1HNC60T4 N-Channel MOSFET, 600 V, 2 A, DPAK
MPNSTD1HNC60T4
Obsolete
STMicroelectronics STD1HNC60T4, PowerMESH™ II, N-Channel MOSFET, 600 V Vdss, 2 A Id, 5 Ohm Rds(on) at 1 A, 10 V, DPAK (TO-252), Surface Mount.
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerMESH™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2A (Tc) |
| Power dissipation | 50W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 5Ohm @ 1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 228 pF @ 25 V |
Product details
Frequently asked questions
Is STD1HNC60T4 obsolete?
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What is the replacement for STD1HNC60T4?
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STD1HNC60T4 datasheet?
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STD1HNC60T4 pinout?
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STD1HNC60T4 equivalent?
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