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STMicroelectronics STD1HN60K3 — Discrete Semiconductors

STD1HN60K3 N-Channel 600 V 1.2 A MOSFET, 8 Ohm Rds(on) DPAK

MPNSTD1HN60K3
Active

STMicroelectronics STD1HN60K3, SuperMESH3 series, N-Channel MOSFET, 600 V Vdss, 1.2 A Id, 8 Ohm Rds(on) at 10 V, 9.5 nC Qg, DPAK (TO-252) package, -55 to 150 °C.

$1.5300Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD1HN60K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.2A (Tc)
Power dissipation27W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs8Ohm @ 600mA, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 50 V

Product details

Switching performance and drive requirements

The STD1HN60K3: Gate charge is 9.5 nC at 10 V. Input capacitance is 140 pF at 50 V. Gate threshold voltage is 4.5 V maximum at 50 µA. Drive voltage for rated Rds(on) is 10 V.

Package and thermal handling — DPAK rework considerations

From a rework standpoint, the DPAK is straightforward: the tab is large enough that a hot-air station with a 10 mm nozzle can reflow the solder without overheating the plastic body. The gate and source pins are on a 2.54 mm pitch, easy to inspect and touch up. No fine-pitch alignment needed — the tab self-centers during reflow if the paste deposit is even.

ROHS3 compliant.

Frequently asked questions

Is STD1HN60K3 active or obsolete?

Active. ROHS3 compliant.

What is the Rds(on) of STD1HN60K3?

Maximum on-resistance is 8 Ohm at 600 mA drain current and 10 V gate drive.