STD1HN60K3

STMicroelectronics · SuperMESH3™ Series

STMicroelectronics STD1HN60K3, SuperMESH3 series, N-Channel MOSFET, 600 V Vdss, 1.2 A Id, 8 Ohm Rds(on) at 10 V, 9.5 nC Qg, DPAK (TO-252) package, -55 to 150 °C.

STMicroelectronics STD1HN60K3
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD1HN60K3 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH3™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.2A (Tc)
Power dissipation27W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs8Ohm @ 600mA, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 50 V

Technical details

STD1HN60K3
[ALLOC] verified
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