STMicroelectronics STD19NF20, N-Channel 200V 15A MOSFET, 160mOhm Rds(on) at 10V, 24nC gate charge, 800pF input capacitance, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MESH OVERLAY™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 800 pF @ 25 V |
The 200 V drain-source rating gives headroom for 48 V bus, 72 V battery, or 120 V rectified mains in flyback or forward converters. Gate charge of 24 nC means a standard gate driver with 1 A peak can switch in tens of nanoseconds; the 800 pF input capacitance is modest, so drive losses are low even at 100 kHz.
The STD19NF20 is obsolete and no longer in production. Contact us for current availability and pricing.
There is no official successor listed. The STP19NF20 is the TO-220 through-hole variant of the same die and is a functional alternative if the package can be changed. For a drop-in DPAK replacement, check ST's current N-channel 200 V portfolio — the Rds(on) and gate charge specs will guide the selection.