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STMicroelectronics STD18N65M5 — Discrete Semiconductors

STD18N65M5 MOSFET N-Ch 650V 15A DPAK, MDmesh V

MPNSTD18N65M5
Active

STMicroelectronics MDmesh V N-channel MOSFET, STD18N65M5, 650 V Vdss, 15 A Id, 220 mOhm Rds(on) at 10 V, 31 nC Qg, DPAK surface-mount package.

$2.9600Ref. price · indicative, final on quote
STMicroelectronics STD18N65M5 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD18N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation110W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs220mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1240 pF @ 100 V

Product details

650 V MDmesh V N-channel in DPAK

Switching and conduction loss budget

Gate charge totals 31 nC at 10 V, a moderate figure for a 650 V device that keeps the gate-driver power stage small. Input capacitance is 1240 pF at 100 V drain-source, which sets the switching speed ceiling in hard-switched topologies like flyback or PFC. Maximum power dissipation is 110 W at the case, with the junction rated to 150 °C. The DPAK package copper footprint on the PCB directly sets the thermal resistance — a 1-inch-square pad on a 2-oz copper board is typical for this class.

Frequently asked questions

What is the Rds(on) of STD18N65M5?

The maximum Rds(on) is 220 mOhm at 7.5 A drain current with 10 V gate drive. This is the value used for conduction-loss calculations in the power stage.

What package does STD18N65M5 come in?

The DPAK footprint is standard for medium-power offline converters.