STD17NF03LT4

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II STD17NF03LT4, N-channel MOSFET, 30 V Vdss, 17 A continuous drain, 50 mOhm Rds(on) at 10 V, DPAK surface-mount package, -55°C to 175°C junction temperature.

STMicroelectronics STD17NF03LT4
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD17NF03LT4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs6.5 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds320 pF @ 25 V

Technical details

Total gate charge is 6.5 nC at 5 V, and the input capacitance is 320 pF at 25 V drain bias.

This extra headroom matters in an engine-bay power supply or a high-ambient industrial enclosure where the local temperature near the heatsink can exceed 100°C.

It is ROHS3 compliant.

STD17NF03LT4
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