STMicroelectronics STripFET™ II STD17NF03LT4, N-channel MOSFET, 30 V Vdss, 17 A continuous drain, 50 mOhm Rds(on) at 10 V, DPAK surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 8.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.5 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 320 pF @ 25 V |
Total gate charge is 6.5 nC at 5 V, and the input capacitance is 320 pF at 25 V drain bias.
This extra headroom matters in an engine-bay power supply or a high-ambient industrial enclosure where the local temperature near the heatsink can exceed 100°C.
It is ROHS3 compliant.
The maximum on-resistance is 50 mOhm at 8.5 A drain current with 10 V gate drive. At 5 V gate drive the Rds(on) will be higher — the datasheet specifies drive voltage for maximum Rds(on) as 10 V, with minimum Rds(on) achievable at 5 V.
The STD17NF03LT4 is supplied in a TO-252-3 DPAK surface-mount package (also designated as DPak with 2 leads plus tab, SC-63). The supplier device package is DPAK.
The maximum gate threshold voltage is 2.2 V at 250 µA drain current. This is the voltage at which the MOSFET just begins to conduct — below this the device is off.