STD170N4F7AG

STMicroelectronics

STMicroelectronics STD170N4F7AG, N-Channel STripFET MOSFET, 40V Vdss, 80A Id, 2.8mOhm Rds(on) @ 10V, AEC-Q101 qualified, DPAK package, -55°C to 175°C junction temperature.

STMicroelectronics STD170N4F7AG
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[IN STOCK] In Stock: 7 pcs
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MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD170N4F7AG specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation172W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4350 pF @ 25 V

Technical details

Obsolete — what this means for the BOM line

The STD170N4F7AG is marked obsolete by STMicroelectronics. For a production BOM that already specifies this part, the procurement path is the surplus and independent-distribution channel.

Automotive-grade parametrics

Switching and drive considerations

Gate charge is 63 nC at 10V, with an input capacitance of 4350 pF at 25V Vds. The 10V drive voltage is specified for minimum Rds(on); at lower gate voltages the on-resistance climbs significantly, so a gate driver rail of at least 10V is assumed in the original design. The ±20V maximum gate-source rating provides margin for ringing on long gate traces, but a gate resistor is still advisable to damp the 4350 pF input capacitance.

STD170N4F7AG
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