STD16NF06T4

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II series, N-Channel MOSFET, 60 V drain-source, 16 A continuous drain, 70 mOhm Rds(on) at 10 V, DPAK surface-mount package, -55°C to 175°C junction temperature.

STMicroelectronics STD16NF06T4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD16NF06T4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs14.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 15 V

Technical details

60 V, 16 A — the power-switching envelope

The STD16NF06T4: N-channel MOSFET rated 60 V drain-source and 16 A continuous drain.

70 mOhm on-resistance — conduction loss anchor

At 16 A the Rds(on) will be higher — expect roughly 80–85 mOhm at full rated current — so the conduction loss at 16 A sits around 20 W. That aligns with the 40 W package dissipation limit at Tc=25°C; a heatsink or adequate PCB copper area is required above 8 A continuous.

14.1 nC gate charge — light on the driver

175°C junction — high-temp margin

DPAK package — board-level fit

Supplied in the DPAK (TO-252) surface-mount package, the STD16NF06T4 has a large exposed drain tab that conducts heat into the PCB copper.

It is ROHS3 compliant, and the base product number STD16 covers the full family.

STD16NF06T4
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