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STMicroelectronics STD16NF06LT4 — Discrete Semiconductors

STD16NF06LT4 N-Channel MOSFET, 60V 24A, 70mOhm Rds(on) DPAK

MPNSTD16NF06LT4
Active

STMicroelectronics STripFET™ II, STD16NF06LT4, N-Channel MOSFET, 60V Vdss, 24A Id, 70mOhm Rds(on) at 8A, 10V, DPAK (TO-252), -55 to 175°C junction temperature.

$1.1800Ref. price · indicative, final on quote
STMicroelectronics STD16NF06LT4 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD16NF06LT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±18V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs7.5 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds370 pF @ 25 V

Product details

60V, 24A N-channel — the DPAK workhorse for switching and load-switch duty

On-resistance is specified at 70 mOhm maximum with an 8 A drain current and 10 V gate drive — the figure that sets the conduction loss in a 24 V or 48 V bus switching application.

Total gate charge is 7.5 nC at 5 V gate drive, and input capacitance is 370 pF at 25 V drain-source — a light gate load that a standard 1 A gate-driver IC can switch at 100 kHz without excessive cross-conduction. The drive voltage range is specified for both 5 V and 10 V logic levels, so the part can be driven directly from a 5 V PWM output from a microcontroller or a dedicated gate-driver IC without a level-shift stage.

Frequently asked questions

What is the Rds(on) of STD16NF06LT4?

Maximum on-resistance is 70 mOhm at 8 A drain current with 10 V gate drive. That is the worst-case figure at 25 °C junction; actual Rds(on) rises with temperature per the normalised curve in the datasheet.