STMicroelectronics · MDmesh™ V Series
STMicroelectronics MDmesh V series, N-Channel MOSFET, 650 V drain-source, 12 A continuous drain, 299 mOhm Rds(on) at 10 V, 45 nC gate charge, DPAK surface-mount package, 150 °C junction temperature.
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 299mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1250 pF @ 100 V |
Rds(on) is 299 mOhm at 6 A, 10 V. Gate charge is 45 nC at 10 V.
For a 90 W dissipation the tab must be soldered to a substantial copper pour; a two-layer board with minimal copper will thermally throttle the part well below the 12 A headline current.
