STMicroelectronics MDmesh M6 series, N-Channel MOSFET, 600 V Drain-Source Voltage, 12 A Continuous Drain Current, 320 mOhm Rds(on) at 6A and 10V, 16.7 nC Gate Charge, Surface Mount DPAK (TO-252), -55°C to 150°C Junction Temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 320mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 575 pF @ 100 V |
The STD16N60M6: Gate charge totals 16.7 nC at 10 V.
The DPAK (TO-252) footprint is a standard surface-mount medium-power package.
At 6 A drain current, the maximum Rds(on) is 320 mOhm at 10 V gate drive.
The maximum Rds(on) is 320 mOhm at 6 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations.
Yes, the part is ROHS3 compliant per the lifecycle record.