STD15P6F6AG

STMicroelectronics · STripFET™ F6 Series

STMicroelectronics STripFET™ F6 STD15P6F6AG, P-Channel MOSFET, 60 V Vdss, 10 A Id, 160 mOhm Rds(on) at 10 V, DPAK (TO-252) package, AEC-Q101 qualified, 175 °C junction temperature.

STMicroelectronics STD15P6F6AG
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD15P6F6AG specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation35W (Tc)
Operating temperature175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 48 V

Technical details

P-channel power switch for 12 V automotive and industrial loads

AEC-Q101 qualification and a 175 °C maximum junction temperature rating confirm suitability for under-hood electronics, engine control modules, and other high-ambient environments where standard commercial-grade parts would derate or fail.

Switching loss and drive budget

Total gate charge is 6.4 nC at 10 V — low enough that a typical MCU GPIO or small-signal transistor can drive the gate directly at moderate switching frequencies. Input capacitance measures 340 pF at 48 V drain-source, which keeps the gate-drive energy per cycle small and reduces cross-conduction risk during fast edges.

STD15P6F6AG
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