STD15N60M2-EP

STMicroelectronics

STMicroelectronics STD15N60M2-EP, N-Channel MOSFET, MDmesh™ M2-EP series, 600 V Vdss, 11 A continuous drain, 378 mOhm Rds(on) at 10 V, 17 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.

STMicroelectronics STD15N60M2-EP
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD15N60M2-EP specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2-EP
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs378mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds590 pF @ 100 V

Technical details

For a given load current, this resistance directly sets the I²R dissipation — at 5.5 A the loss is about 11.4 W, which the 110 W maximum power dissipation at the case can handle with adequate heatsinking. Gate charge is 17 nC at 10 V, a low figure for a 600 V device of this current rating. Together with the low gate charge, this part is suited for hard-switched topologies where fast transitions reduce turn-on and turn-off losses.

Package and mounting — DPAK for surface-mount assembly

The STD15N60M2-EP comes in the DPAK (TO-252) surface-mount package, with two leads and a tab that serves as the drain connection.

STD15N60M2-EP
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