STMicroelectronics MDmesh™ series, N-Channel MOSFET, 600 V Drain-Source Voltage, 12 A Continuous Drain Current, 338 mΩ Rds(on) at 6 A, 10 V, 15.3 nC Gate Charge, TO-252-3 (DPak) package, -55°C to 150°C operating temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 338mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 607 pF @ 100 V |
The STD15N60DM6 is an N-Channel 600 V MOSFET in a TO-252 (DPak) surface-mount package. Gate charge is 15.3 nC at 10 V; input capacitance is 607 pF at 100 V drain-source.
Operating temperature range is -55°C to 150°C; power dissipation is 110 W.
For current designs this means no forced requalification risk.
The maximum Rds(on) is 338 mΩ at a drain current of 6 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in your power stage.