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STMicroelectronics STD155N3LH6 — Discrete Semiconductors

STD155N3LH6 N-Channel MOSFET, 30 V, 80 A, 3 mΩ

MPNSTD155N3LH6
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STMicroelectronics DeepGATE™, STripFET™ VI N-Channel MOSFET, 30 V drain-to-source, 80 A continuous drain, 3 mΩ max Rds(on) at 10 V gate drive, D-PAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.

$2.1500Ref. price · indicative, final on quote
STMicroelectronics STD155N3LH6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD155N3LH6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds3800 pF @ 25 V

Product details

The drive voltage range is 5 V and 10 V.

Total gate charge is 80 nC at 5 V gate-to-source. Input capacitance is 3800 pF at 25 V drain-to-source.

The maximum gate-to-source voltage is ±20 V, giving margin against overshoot on the gate drive. The threshold voltage is 2.5 V maximum at 250 µA drain current, so a 5 V logic-level drive will fully enhance the device, though the on-resistance will be higher than at 10 V.

The D-PAK (TO-252) is a surface-mount package with a tab that carries the drain connection.

Frequently asked questions

What is the Rds(on) of STD155N3LH6?

The maximum on-resistance is 3 mΩ at a drain current of 40 A with a 10 V gate-to-source voltage. The drive voltage range is 5 V to 10 V, but the on-resistance will be higher at 5 V gate drive.