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STMicroelectronics STD150NH02LT4 — Discrete Semiconductors

STD150NH02LT4 N-Channel MOSFET, 24V 150A DPAK, Obsolete

MPNSTD150NH02LT4
Obsolete

STMicroelectronics STripFET™ III STD150NH02LT4, N-Channel MOSFET, 24 V Vdss, 150 A Id, 3.5 mOhm Rds(on) at 75 A/10 V, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.

STMicroelectronics STD150NH02LT4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD150NH02LT4 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C150A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4450 pF @ 15 V

Product details

24 V / 150 A N-channel power switch in DPAK

It comes in a TO-252 DPAK surface-mount package, a common footprint for low-voltage, high-current switching in automotive and industrial power stages. The junction temperature range extends from -55°C to 175°C, covering under-hood and high-ambient environments.

Field-service note: DPAK swap on site

The DPAK (TO-252) package is a common surface-mount power MOSFET footprint. The tab is the drain, so make sure the solder joint on the tab is solid; a cold joint there will cook the part under load. No lab bench needed, but a decent pair of tweezers and some flux are in the kit.

Frequently asked questions

What is the replacement for STD150NH02LT4?

A pin-compatible substitute would need to be qualified from parametric cross-reference against the 24 V Vdss, 150 A Id, and DPAK package requirements.

Is STD150NH02LT4 compatible with 5V gate drive?

The drive voltage range for achieving rated Rds(on) is 5 V to 10 V, so a 5 V gate drive is within the specified range. However, the maximum Rds(on) of 3.5 mOhm is specified at 10 V gate drive; at 5 V the on-resistance will be higher, so check the typical Rds(on) vs Vgs curve in the datasheet for your operating point.