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STMicroelectronics STD14NM50NAG — Discrete Semiconductors

STD14NM50NAG N-Channel MOSFET, 500 V, 12 A, DPAK, AEC-Q101

MPNSTD14NM50NAG
End of Life

STMicroelectronics MDmesh™ II, N-Channel MOSFET, 500 V Vdss, 12 A continuous drain, 320 mOhm Rds(on) at 6 A, 10 V gate drive, DPAK surface-mount package, AEC-Q101 qualified.

$2.2500Ref. price · indicative, final on quote
STMicroelectronics STD14NM50NAG datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD14NM50NAG specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation90W
Operating temperature150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs320mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds816 pF @ 50 V

Product details

500 V N-channel MOSFET with automotive qualification

The STD14NM50NAG: The 320 mOhm maximum on-resistance at 6 A, 10 V gate drive defines the conduction loss for a typical switching application. AEC-Q101 qualification confirms suitability for automotive power-train, DC-DC converter, and PFC stages where reliability screening is required.

The device requires a 10 V gate drive for the specified on-resistance; the maximum gate threshold voltage is 4 V at 250 µA drain current. Total gate charge is 27 nC at 10 V, and input capacitance is 816 pF at 50 V drain-source, giving the design engineer a clear budget for gate-drive sizing and switching loss estimation.

The junction temperature rating is 150 °C.

Frequently asked questions

Is STD14NM50NAG automotive qualified?

Yes, the STD14NM50NAG is AEC-Q101 qualified and carries an Automotive grade designation, making it suitable for automotive power applications.