Skip to main content
STMicroelectronics STD14NM50N — Discrete Semiconductors

STD14NM50N N-Channel MOSFET, 500 V, 12 A, MDmesh™ II

MPNSTD14NM50N
Obsolete

STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 500 V drain-source, 12 A continuous drain, 320 mOhm Rds(on) at 6 A, 10 V drive, DPAK surface-mount package.

$2.9600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD14NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs320mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds816 pF @ 50 V

Product details

STMicroelectronics no longer manufactures this part in volume. For sustainment of existing designs, the remaining channel is surplus and broker inventory. Any new design-in should target a current-production MDmesh™ or equivalent 500 V N-channel MOSFET in DPAK. The 500 V, 12 A, 320 mOhm rating bracket is well-served by several active alternatives, though pin-compatibility and gate-drive requirements must be verified per the target datasheet.

The 500 V drain-source voltage sets the part for offline flyback, forward, and PFC stages operating from rectified 230 VAC or universal input.

Frequently asked questions

What is the replacement for STD14NM50N?

STMicroelectronics has not published a direct pin-compatible successor for the STD14NM50N under the MDmesh™ II series. Several active 500 V, 12 A class N-channel MOSFETs in DPAK exist from ST and other vendors, but each has its own gate charge, Rds(on), and switching profile. The replacement choice depends on the specific drive voltage and switching frequency of the application. Cross-reference the gate charge and on-resistance against the original design's margin before substituting.