STD13NM60ND

STMicroelectronics · FDmesh™ II Series

STMicroelectronics FDmesh™ II N-Channel MOSFET, STD13NM60ND, 600V, 11A, DPAK (TO-252), 380mOhm Rds(on) at 10V.

STMicroelectronics STD13NM60ND
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD13NM60ND specifications
Parameter / AttributeSpecification / Value
SeriesFDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation109W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs24.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds845 pF @ 50 V

Technical details

Gate charge and switching-loss budget

The STD13NM60ND: These numbers let the designer estimate the gate-drive current needed for a target switching frequency — at 100 kHz, the average gate-drive current is 2.45 mA, well within a standard driver's capability.

Package, mounting, and thermal reality

The DPAK (TO-252) footprint is a standard surface-mount power package. Maximum junction temperature is 150 °C. The 150 °C rating is the absolute limit; a derated design targeting 125 °C junction leaves headroom for transient overloads and extends reliability.

Active lifecycle and compliance

STMicroelectronics lists the STD13NM60ND as an active product — no NRND or EOL notice. It is ROHS3 compliant, suitable for EU and global BOMs without RoHS exemption tracking. The device is available in Tape & Reel and Cut Tape options for volume or prototype quantities.

STD13NM60ND
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