STD13NM60N

STMicroelectronics

STMicroelectronics STD13NM60N, MDmesh™ II, N-Channel MOSFET, 600 V Vdss, 11 A Id, 360 mOhm Rds(on), DPAK (TO-252) package, Surface Mount.

STMicroelectronics STD13NM60N
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD13NM60N specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 50 V

Technical details

600 V, 11 A N-channel MOSFET in DPAK — MDmesh™ II series

It comes in a surface-mount DPAK (TO-252) package, a common footprint for medium-power offline converters, PFC stages, and flyback supplies.

Total gate charge is 30 nC at 10 V, a moderate figure that lets a standard gate driver switch the device without excessive drive losses. Input capacitance measures 790 pF at 50 V drain-source, which influences the driver's peak current requirement and the turn-on delay.

Temperature rating and operating environment

The device is rated for a maximum junction temperature of 150°C, which suits it for industrial power supplies, lighting ballasts, and motor drives where ambient heat and self-heating push junction temperatures well above 85°C.

STD13NM60N
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