STMicroelectronics
STMicroelectronics MDmesh™ M6 series, N-Channel MOSFET, 600 V Vdss, 10 A continuous drain, 380 mOhm Rds(on) at 10 V, 13 nC gate charge, D-PAK (TO-252) surface mount.
MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ M6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 92W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 509 pF @ 100 V |
The STD13N60M6: Gate charge is 13 nC at 10 V.
At 5 A continuous, that is roughly 9.5 W dissipated in the die — within the 92 W package limit, but the junction-to-case thermal path needs a good heatsink or PCB copper area to keep the junction below 150°C. The 13 nC gate charge helps the driver transition quickly, which is useful for reducing switching overlap losses in hard-switched topologies.
