STD13N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics STD13N60M2, MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on) at 10 V, DPAK (TO-252), -55°C to 150°C junction temperature.

STMicroelectronics STD13N60M2
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD13N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds580 pF @ 100 V

Technical details

STD13N60M2
[ALLOC] verified
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