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STMicroelectronics STD13N60M2 — Discrete Semiconductors

STD13N60M2 N-Channel 600 V 11 A MOSFET, DPAK, MDmesh II Plus

MPNSTD13N60M2
Active

STMicroelectronics STD13N60M2, MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on) at 10 V, DPAK (TO-252), -55°C to 150°C junction temperature.

$2.8800Ref. price · indicative, final on quote
STMicroelectronics STD13N60M2 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD13N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds580 pF @ 100 V

Product details

The STD13N60M2: It comes in a surface-mount DPAK (TO-252-3) package, which means the tab is the drain — the PCB copper area under the tab sets the thermal resistance, so that 110 W max dissipation figure assumes a decent-sized pad, not a narrow trace.

Gate charge and switching — 17 nC at 10 V

Total gate charge is 17 nC at Vgs = 10 V, with an input capacitance of 580 pF at Vds = 100 V.

Temperature range — military-grade junction

The 4 V max gate threshold at 250 µA drain current means it stays off through cold start.

Frequently asked questions

Does the STD13N60M2 have a TO-220 version?

The STD13N60M2 is specifically the DPAK surface-mount variant. ST offers the same die in a TO-220 package under the base product number STD13 — the STP13N60M2 is the through-hole equivalent in the same MDmesh II Plus series.