STD13N60DM2

STMicroelectronics

STMicroelectronics MDmesh™ DM2 series N-Channel MOSFET, STD13N60DM2, 600 V Vdss, 11 A continuous drain, 365 mOhm Rds(on) at 10 V, 19 nC gate charge, DPAK surface-mount package, -55 to 150 °C junction temperature.

STMicroelectronics STD13N60DM2
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD13N60DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs365mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds730 pF @ 100 V

Technical details

600 V MDmesh DM2 MOSFET in DPAK — what the ratings mean

Its 600 V drain-source breakdown voltage targets offline power supplies, flyback converters, and PFC stages where the primary-side switch sees rectified mains plus reflected voltage. The 11 A continuous current rating at 25 °C case temperature is the DC limit — in a switching converter the RMS current and junction temperature derating will set the usable current lower.

The ±25 V maximum gate-source rating provides margin for gate-drive overshoot in high-dV/dt environments.

The DPAK footprint is a standard industry layout, so PCB redesign for a second-source part in the same package is straightforward.

STD13N60DM2
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