STD130N6F7

STMicroelectronics

STMicroelectronics STD130N6F7, STripFET N-Channel MOSFET, 60 V Vdss, 80 A continuous drain, 5 mOhm Rds(on) at 10 V, 42 nC gate charge, DPAK surface mount, -55°C to 175°C junction.

STMicroelectronics STD130N6F7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD130N6F7 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation134W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 30 V

Technical details

The DPAK (TO-252) surface-mount package lets the PCB copper area serve as the primary heatsink; the exposed tab is the drain connection.

Junction temperature range and environment

The 175°C max is common for automotive-grade power MOSFETs; the -55°C floor covers cold-crank and outdoor telecom cabinet scenarios.

The specified drive voltage for achieving the minimum Rds(on) is 10 V; the maximum gate-source voltage is ±20 V. The 2600 pF input capacitance at 30 V drain-source gives a rough idea of the driver current needed for a given rise time.

The tab is soldered to the PCB pad for both electrical connection and thermal dissipation. The supplier device package is DPAK.

STD130N6F7
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