STD13003T4

STMicroelectronics

STMicroelectronics STD13003T4 NPN bipolar power transistor, 400 V Vce breakdown, 1.5 A collector current, 20 W max power dissipation, DPAK (TO-252) surface-mount package.

STMicroelectronics STD13003T4
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Technical specifications

STD13003T4 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown400 V
Current - collector (Ic)1.5 A
DC current gain (hFE) (Min) @ ic, vce5 @ 1A, 2V
Power - max20 W
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic3V @ 500mA, 1.5A

Technical details

400 V NPN in DPAK — offline flyback workhorse

The STMicroelectronics STD13003T4 is an NPN bipolar power transistor rated for 400 V collector-emitter breakdown and 1.5 A continuous collector current, housed in a DPAK (TO-252) surface-mount package.

Vce(sat) and conduction loss — what 3 V at 1.5 A means

The saturation voltage is 3 V maximum at 1.5 A collector current with 500 mA base drive.

DC current gain — hFE floor at 1 A

Minimum DC current gain is 5 at 1 A collector current with 2 V Vce.

DPAK footprint and reflow considerations

The DPAK (TO-252) package has three leads plus a large tab.

STMicroelectronics lists the STD13003T4 as an active product with ROHS3 compliance.

STD13003T4
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