500 V, 11 A N-channel MOSFET in DPAK — FDmesh™ II generation
At 11 A full load, conduction loss runs about 46 W in the channel alone — that number sets the heatsinking requirement. The 100 W package dissipation limit at the case (Tc) means the DPAK's thermal pad needs a solid copper pour and via stitch to keep junction temperature under 150 °C in continuous operation.
30 nC gate charge — switching speed trade-off
It keeps the gate drive energy manageable — a standard 1 A gate driver can switch it in the tens of nanoseconds — but the Miller plateau region still needs attention in the layout. For switching frequencies above 100 kHz, the gate charge losses start cutting into efficiency, so the trade-off between conduction and switching loss needs to be checked against the operating point.
For BOM lines that already specify this MOSFET, the procurement path runs through independent distribution and surplus inventory.