500 V N-Channel MOSFET in DPAK — MDmesh II
The MDmesh II structure provides fast switching with reduced gate charge — 30 nC typical at 10 V — and a low on-resistance of 380 mOhm at 5.5 A, 10 V gate drive.
Key ratings for the switching design
The 500 V drain-source rating places this MOSFET in the high-voltage class for off-line flyback and forward converters, PFC stages, and two-switch topologies. Gate charge of 30 nC at 10 V keeps switching losses moderate for a 500 V device, easing gate-drive design in the 50–150 kHz range. Input capacitance of 940 pF at 50 V drain-source is typical for this voltage class and sets the drive current requirement for a given rise time.