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STMicroelectronics STD12NF06T4 — Discrete Semiconductors

STD12NF06T4 N-Channel MOSFET, 60V 12A DPAK

MPNSTD12NF06T4
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STMicroelectronics STripFET™ II series, N-Channel MOSFET, 60 V drain-source, 12 A continuous drain (Tc), 100 mOhm Rds(on) at 10 V, DPAK (TO-252) surface mount, -55 to 175 °C operating junction temperature.

$1.2400Ref. price · indicative, final on quote
STMicroelectronics STD12NF06T4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD12NF06T4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds315 pF @ 25 V

Product details

The 12 nC typical gate charge keeps switching losses manageable in medium-frequency converters, while the 315 pF input capacitance at 25 V drain-source gives the gate-drive circuit a predictable load.

Conduction loss and gate-drive budget

At 6 A the dissipation is roughly 3.6 W, which the 30 W package limit handles with adequate thermal margin when the DPAK tab is soldered to a copper plane. The gate-drive voltage is specified at 10 V for the rated on-resistance; driving it from a 5 V logic rail will roughly double the Rds(on) — confirm the gate-drive circuit delivers the full 10 V if efficiency matters.

Frequently asked questions

Is the STD12NF06T4 lead-free?

The datasheet should be consulted for the exact plating and RoHS certification details.