STD12NF06LT4

STMicroelectronics

STMicroelectronics STripFET™ II STD12NF06LT4, N-Channel MOSFET, 60 V Vdss, 12 A Id, 100 mOhm Rds(on) at 10 V, 10 nC Qg, DPAK surface-mount package, -55°C to 175°C junction temperature.

STMicroelectronics STD12NF06LT4
[IN STOCK] In Stock: 107 pcs
$0.39/ pc

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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD12NF06LT4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation42.8W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V

Technical details

At the full 12 A continuous rating, conduction loss reaches about 14.4 W at 100 mOhm, which the 42.8 W package dissipation limit can handle with adequate thermal management — a heatsink pad or via array under the DPAK tab is expected.

10 nC gate charge — low drive burden for medium-frequency switching

The total gate charge is 10 nC at 5 V, which is modest for a 12 A rated device.

This part can be used in avionics, downhole instrumentation, or outdoor telecom equipment where ambient temperatures push beyond 85°C. The 175°C maximum junction is higher than the typical 150°C limit on many standard MOSFETs, giving extra headroom for high-current or high-ambient designs.

The STD12NF06LT4 is listed as obsolete. It is no longer manufactured by STMicroelectronics and is not available through the factory channel. Sourcing is through independent distribution — new-old-stock or surplus inventory.

STD12NF06LT4
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