STD12NF06L-1

STMicroelectronics

STMicroelectronics STD12NF06L-1, STripFET™ II N-Channel MOSFET, 60 V, 12 A, 100 mOhm, I-PAK, Through Hole, Tube.

STMicroelectronics STD12NF06L-1
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Technical specifications

STD12NF06L-1 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation42.8W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V

Technical details

60 V, 12 A N-channel — STripFET™ II

The STD12NF06L-1: Housed in a through-hole I-PAK package (TO-251AA), it suits designs where a compact, leaded footprint is preferred over surface-mount for thermal or mechanical reasons.

On-resistance and gate charge — switching fit

Total gate charge is 10 nC at 5 V, and input capacitance is 350 pF at 25 V drain-source — these low values keep switching losses modest in moderate-frequency converters and allow direct drive from a PWM controller without an external driver in many cases.

STD12NF06L-1
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