STD12N60M2

STMicroelectronics

STMicroelectronics MDmesh M2 series, N-Channel MOSFET, 600 V Vdss, 9 A continuous drain, 450 mOhm Rds(on) at 10 V, 16 nC gate charge, DPAK (TO-252) surface-mount package.

STMicroelectronics STD12N60M2
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD12N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation85W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds538 pF @ 100 V

Technical details

600 V, 9 A N-channel — MDmesh M2 for offline power conversion

Gate drive and switching — 16 nC Qg at 10 V

The drive voltage for the rated Rds(on) is 10 V, but the device can be driven from a 12 V rail or a dedicated gate-driver IC. The ±25 V maximum gate-source rating gives margin against ringing on the gate node in a typical flyback layout, though a series gate resistor and a Schottky clamp are still good practice when the trace inductance is high.

Package and thermal — DPAK (TO-252) surface mount

The STD12N60M2 comes in a standard DPAK (TO-252) surface-mount package with two leads and a tab (SC-63 equivalent).

STD12N60M2
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