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STMicroelectronics STD12N60DM6 — Discrete Semiconductors

STD12N60DM6 N-Channel MOSFET, 600 V, 10 A, MDmesh

MPNSTD12N60DM6
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STMicroelectronics MDmesh™ N-Channel MOSFET, STD12N60DM6, 600 V Vdss, 10 A continuous drain at 25°C, 390 mOhm Rds(on) at 5 A/10 Vgs, 17 nC gate charge, D-PAK (TO-252) surface mount, -55°C to 150°C junction temperature.

$2.1800Ref. price · indicative, final on quote
STMicroelectronics STD12N60DM6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD12N60DM6 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs390mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds508 pF @ 100 V

Product details

600 V, 10 A N-channel — where this MDmesh part fits

The STD12N60DM6: This voltage and current class targets the primary switch in offline flyback and PFC stages for AC-DC converters, LED drivers, and auxiliary power supplies up to about 150 W.

Conduction and switching — the numbers that drive the design

At 10 A the Rds(on) will be higher due to the current-dependent channel resistance, so the conduction loss budget should be calculated at the actual operating current and junction temperature, not the 25°C datasheet value. Gate charge totals 17 nC at 10 Vgs. Input capacitance (Ciss) is 508 pF at 100 Vds.

Package and temperature range — board-level fit

Surface-mount D-PAK (TO-252) with 2 leads plus the drain tab. The gate-source voltage maximum is ±25 V, so a standard 12 V or 15 V gate drive is well within the safe window.

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